D.I.S Germany GmbH
Ion irradiation and implantation facility

Irradiation facilities – high current

The compact D.I.S Germany Ion Irradiation and Implantation Facilities operate a versatile Electron Cyclotron Resonance Ion Source (ECRIS). The exctracted high-current ion beam is charge and mass analyzed via a magnetic dipole and can be used for further applications either in a connected D.I.S target chamber or in a downstream-connected customer beamline. 
The product is aimed to users in research and development as well as for industrial applications, providing ion beams up to mA beam current.

Type-H Facility wo Chamber Vacuum Scheme Figure 1: Vacuum scheme of the D.I.S ion irradiation and implanter setup Type-h without irradiation chamber.   

Type-H Facility w Chamber Vacuum SchemeFigure 2: Vacuum scheme of the D.I.S ion irradiation and implanter setup Type-h with irradiation chamber.

Type-H Facility w Chamber Potential Scheme  Figure 3: Potential scheme of the D.I.S ion irradiation Type-M setup including irradiation chamber

Ion Irradiation / Implantation Facility - Type H

Ion Irradiation and Implantation Facility

SPECIAL FEATURES

  • ECRIS with a magnetic dipole for ion beam currents up to emA
  • Facility is offered in different ion beam orientation configurations:
    • horizontal beam guiding
    • vertical bottom-top beam guiding
    • vertical top-bottom beam guiding

OPTIONAL SUPPLEMENTING DEVICES

  • alternative ion source configurations with Electron Beam Ion Sources (EBIS) for highly charged ions or Field Ionization Sources (FIS) for the ionization of gases and complex molecules
  • generation of metal ion beams over a wide range of elements using the MIVOC method (MIVOC: Metal Ions from VOlatile Compounds)
  • gas mixing board for different process gases

BASIC CONFIGURATION

The ion irradiation and implantation facility includes an ion beam source with RF and gas feeding systems, ion beam optics, a charge state & mass separator (magnetic dipole), an irradiation chamber with substrate manipulator stage (heatable up to 500°C and devices for linear target motion, for the adjustment of the target tilting angle and for target rotation) for substrates up to a size of 200 mm, vacuum system, high voltage power supplies and PLC-based command & control (C&C).

Ion Source

The offered ion source is an Electron Cyclotron Resonance Ion Source (ECRIS) capable of producing ion beams of up to emA. Any gas can be fed into the ion source, special techniques can also be used to inject metallic ions and complex organic molecules.

Beam Guiding System

In order to purify the ion beam according to the ion charge state and ion mass, and in dependence on the required ion beam current a magnetic dipole (high ion current applications)  is mounted downstream of the extraction system.

ION IRRADIATION CHAMBER

The ion irradiation chamber includes a Faraday cup and a manipulator stage suitable for heating (up to 500°C or higher on customer demand) and rotation of the substrates. The manipulator stage is installed on a linear and rotary feedthrough for linear translation as well as for realizing different ion implantation angles.

TECHNICAL DATA

produced ions
  • protons (H+), noble gas ions (e.g. He+, Ne+, Ar+, Xe+ etc.) but also other elements,
  • injection methods for metallic ions offered on request
energy range from 1 keV to 50 keV
ion beam current hundreds of eμA up to emA
charge state & mass filter
  • magnetic dipole for high ion beam current applications
beam guiding system electrostatic beam optics with appropriate HV power supplies
beam scan samples with variable sizes up to 200 mm or on request
vacuum
  • base pressure down to ~10-8 mbar,
  • working pressure ~10-6 mbar and higher
software
  • Programmable Logic Controller (PLC) and graphical Human Machine Interface,
  • full control of ion source and beam parameters,
  • optional, full control of the parameters of the irradiation chamber
irradiation chamber
  • for up to 200 mm sample size,
  • variable implantation angle,
  • heating up to 500°C and higher (on customer demand),
  • measurement of the beam current,
  • software control of the applied ion current,
  • transfer system on request
approx. box size (length x width x height) 2 m x 2 m x 2 m

The facility has a modular design and is offered as a complete ion irradiation solution. Additionally, individual components of the system can be ordered.
Please do not hesitate to contact us to find a solution suitable for your specific application.

Datasheet:

data_sheet_irradiation_implantation_facility.pdf